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dc.contributor.authorAhmadpour, S.
dc.contributor.authorNavimipour, N.J.
dc.contributor.authorBahar, A.N.
dc.contributor.authorYalcin, S.
dc.date.accessioned2023-10-19T15:05:28Z
dc.date.available2023-10-19T15:05:28Z
dc.date.issued2023
dc.identifier.issn1536-125X
dc.identifier.urihttps://doi.org/10.1109/TNANO.2023.3309908
dc.identifier.urihttps://hdl.handle.net/20.500.12469/4911
dc.description.abstractIt is expected that Complementary Metal Oxide Semiconductor (CMOS) implementation with ever-smaller transistors will soon face significant issues such as device density, power consumption, and performance due to the requirement for challenging fabrication processes. Therefore, a new and promising computation paradigm, nanotechnology, can replace CMOS technology. In addition, a new frontier in computing is opened up by nanotechnology called atomic silicon, which has the same extraordinary behavior as quantum dots. Furthermore, Dangling Bond (DB) quantum dots play a vital role in atomic silicon nanotechnology. On the other hand, atomic silicon circuits are highly prone to defects, so suggested fault-tolerant structures in this technology play important roles. The addition operator holds immense significance in digital signal processing and computer arithmetic operations, making it one of the primary operations in digital circuits. Consequently, full adders have gained popularity and find widespread use in efficiently solving mathematical problems. In the following paper, we will explore the development of an efficient fault-tolerant 3-input majority gate (FT-MV3) using DBs, further enhancing the capabilities of digital circuits. A rule-based approach to the redundant DB achieves a less complex and more robust atomic silicon layout for the MV3. We use the powerful SiQAD tool to simulate all the proposed circuits. In addition, to confirm the efficiency of the proposed gate, all common defects, such as single and double dangling bond omission defects and DB dislocation defects, are examined. The suggested majority gate is 100% and 66.66% tolerant against single and double DB omission defects, respectively. Furthermore, a new full adder design is introduced using the suggested FT-MV3 gate. The results show that the suggested full adder is 44.44% and 35.35% tolerant against single and double DB omission defects. Finally, a fault-tolerant four-bit adder is designed based on the proposed full adder. IEEEen_US
dc.language.isoengen_US
dc.publisherInstitute of Electrical and Electronics Engineers Inc.en_US
dc.relation.ispartofIEEE Transactions on Nanotechnologyen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectAddersen_US
dc.subjectAtomic Siliconen_US
dc.subjectDangling Bond (DB)en_US
dc.subjectFault toleranceen_US
dc.subjectFault tolerant systemsen_US
dc.subjectFault-Toleranten_US
dc.subjectLayouten_US
dc.subjectLogic gatesen_US
dc.subjectQuantum dotsen_US
dc.subjectSiliconen_US
dc.subjectSilicon Quantum Atomic Designeren_US
dc.subjectAtomsen_US
dc.subjectCMOS integrated circuitsen_US
dc.subjectDangling bondsen_US
dc.subjectDigital signal processingen_US
dc.subjectEnergy efficiencyen_US
dc.subjectFault toleranceen_US
dc.subjectMOS devicesen_US
dc.subjectNanocrystalsen_US
dc.subjectOxide semiconductorsen_US
dc.subjectSemiconductor quantum dotsen_US
dc.subjectAtomic siliconen_US
dc.subjectDangling bonden_US
dc.subjectEfficient architectureen_US
dc.subjectFault- tolerant systemsen_US
dc.subjectFault-toleranten_US
dc.subjectFull addersen_US
dc.subjectLayouten_US
dc.subjectMajority gatesen_US
dc.subjectQuantum doten_US
dc.subjectSilicon quantum atomic designeren_US
dc.subjectAddersen_US
dc.titleAn Efficient Architecture of Adder Using Fault-Tolerant Majority Gate Based on Atomic Silicon Nanotechnologyen_US
dc.typearticleen_US
dc.identifier.startpage1en_US
dc.identifier.endpage5en_US
dc.departmentN/Aen_US
dc.identifier.doi10.1109/TNANO.2023.3309908en_US
dc.identifier.scopus2-s2.0-85169706638en_US
dc.institutionauthorN/A
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.authorscopusid57202686649
dc.authorscopusid57299192300
dc.authorscopusid56412536200
dc.authorscopusid57780713800
dc.khas20231019-Scopusen_US


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