Browsing by Author "Kheyrandish, Mohammad"
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Article Citation Count: 2Novel efficient and scalable design of full-adder in atomic silicon dangling bonds (ASDB) technology(Iop Publishing Ltd, 2023) Rasmi, Hadi; Mosleh, Mohammad; Navimipour, Nima Jafari; Kheyrandish, MohammadAtomic Silicon Dangling Bonds (ASDB) is an advanced emerging nanotechnology to replace CMOS technology; because it allows the designing of circuits with very high-speed and low-density. However, one of the most critical challenges in implementing circuits in ASDB nanotechnology is output stability and possible defects, such as DB omission, DB misalignment, and DB extra deposition, which can be overcome using a suitable designing pattern. Therefore, developing stable and robust structures is considered as one of essential topics in ASDB. This paper first proposes two novel and stable computing circuits, including a three-input majority voter (MV3) and three-input XOR (XOR3); based on triangular and rhombus patterns, respectively. Then, an efficient ASDB full-adder is designed using the suggested MV3 and XOR3 gates. Finally, two and four-bit ripple carry adders are developed using proposed full-adder. Simulation results indicate that the suggested MV3 and XOR3 are superior to previous designs, by more than 80%, 48%, and 9.5%, averagely; in terms of occupied area, energy, and occurrence, respectively. Moreover, the proposed gates are investigated against possible defects, and the results show high stability.Article Citation Count: 0An ultra efficient 2:1 multiplexer using bar-shaped pattern in atomic silicon dangling bond technology(Springer, 2024) Rasmi, Hadi; Mosleh, Mohammad; Navimipour, Nima Jafari; Kheyrandish, MohammadAs CMOS technology approaches its physical and technical limits, alternative technologies such as nanotechnology or quantum computing are needed to overcome the challenges of lithography, transistor scaling, interconnects, and miniaturization. This article introduces a novel nanotechnology that uses atomic-scale silicon dangling bonds (ASDB) to create high-performance, low-power, nanoscale logic circuits. DBs are atoms that can form basic logic gates on a silicon surface using a scanning tunneling microscope device. ASDB can also be an alternative to the existing complementary metal oxide semiconductor (CMOS) technology. The article also proposes a new bar-shaped pattern to design gates and logic circuits with ASDB nano tecnolgoy. The bar-shaped pattern improves the reliability of the output, reduces the area and power consumption, and solves the problem of interatomic energy effects of ASDB. The article demonstrates the efficiency of the bar-shaped pattern by implementing two-input gates such as AND, NAND, OR, NOR, XOR, XNOR, and a 2:1 multiplexer with ASDB. The article also uses a powerful tool called SiQAD to simulate and verify the performance of the proposed structures with ASDB. According to the simulation results, the proposed logic gates are more energy efficient, stable, and compact than the previous structures. They consume 35% and 24.34% less energy and have 14.18% more stability, respectively.