Browsing by Author "Kheyrandish, Mohammad"

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Citation Count: 2
Novel efficient and scalable design of full-adder in atomic silicon dangling bonds (ASDB) technology
(Iop Publishing Ltd, 2023) Rasmi, Hadi; Mosleh, Mohammad; Navimipour, Nima Jafari; Kheyrandish, Mohammad
Atomic Silicon Dangling Bonds (ASDB) is an advanced emerging nanotechnology to replace CMOS technology; because it allows the designing of circuits with very high-speed and low-density. However, one of the most critical challenges in implementing circuits in ASDB nanotechnology is output stability and possible defects, such as DB omission, DB misalignment, and DB extra deposition, which can be overcome using a suitable designing pattern. Therefore, developing stable and robust structures is considered as one of essential topics in ASDB. This paper first proposes two novel and stable computing circuits, including a three-input majority voter (MV3) and three-input XOR (XOR3); based on triangular and rhombus patterns, respectively. Then, an efficient ASDB full-adder is designed using the suggested MV3 and XOR3 gates. Finally, two and four-bit ripple carry adders are developed using proposed full-adder. Simulation results indicate that the suggested MV3 and XOR3 are superior to previous designs, by more than 80%, 48%, and 9.5%, averagely; in terms of occupied area, energy, and occurrence, respectively. Moreover, the proposed gates are investigated against possible defects, and the results show high stability.
Citation Count: 0
Towards Atomic Scale Quantum Dots in Silicon: An Ultra-Efficient and Robust Subtractor Using Proposed P-Shaped Pattern
(Ieee-inst Electrical Electronics Engineers inc, 2024) Rasmi, Hadi; Mosleh, Mohammad; Navimipour, Nima Jafari; Kheyrandish, Mohammad
Today, Complementary Metal-Oxide-Semiconductor (CMOS) technology faces critical challenges, such as power consumption and current leakage at the nanoscale. Therefore, Atomic Silicon Dangling Bond (ASDB) technology has been proposed as one of the best candidates to replace CMOS technology; due to its high-speed switching and low power consumption. Among the most important issues in ASDB nanotechnology, output stability and robustness against possible faults may be focused. This paper first introduces a novel P-shaped pattern in ASDB, for designing stable and robust primitive logic gates, including AND, NAND, OR, NOR and XOR. Then, two combinational circuits, half-subtractor and full-subtractor, are proposed by the proposed ASDB gates. The simulation results show high output stability as well as adequate robustness, against various defects obtained by the proposed designs; on average, they have improvements of more than 56% and 62%, against DB omission defects and extra cell deposition defects; respectively. Also, the results of the investigations show that the proposed circuits have been improved by 65%, 21% and 2%, in terms of occupied area, energy and occurrence, respectively; compared to the previous works.
Citation Count: 0
An ultra efficient 2:1 multiplexer using bar-shaped pattern in atomic silicon dangling bond technology
(Springer, 2024) Rasmi, Hadi; Mosleh, Mohammad; Navimipour, Nima Jafari; Kheyrandish, Mohammad
As CMOS technology approaches its physical and technical limits, alternative technologies such as nanotechnology or quantum computing are needed to overcome the challenges of lithography, transistor scaling, interconnects, and miniaturization. This article introduces a novel nanotechnology that uses atomic-scale silicon dangling bonds (ASDB) to create high-performance, low-power, nanoscale logic circuits. DBs are atoms that can form basic logic gates on a silicon surface using a scanning tunneling microscope device. ASDB can also be an alternative to the existing complementary metal oxide semiconductor (CMOS) technology. The article also proposes a new bar-shaped pattern to design gates and logic circuits with ASDB nano tecnolgoy. The bar-shaped pattern improves the reliability of the output, reduces the area and power consumption, and solves the problem of interatomic energy effects of ASDB. The article demonstrates the efficiency of the bar-shaped pattern by implementing two-input gates such as AND, NAND, OR, NOR, XOR, XNOR, and a 2:1 multiplexer with ASDB. The article also uses a powerful tool called SiQAD to simulate and verify the performance of the proposed structures with ASDB. According to the simulation results, the proposed logic gates are more energy efficient, stable, and compact than the previous structures. They consume 35% and 24.34% less energy and have 14.18% more stability, respectively.