A Nano-Scale N-Bit Ripple Carry Adder Using an Optimized Xor Gate and Quantum-Dots Technology With Diminished Cells and Power Dissipation

dc.contributor.author Ahmadpour, Seyed-Sajad
dc.contributor.author Navimipour, Nima Jafari
dc.contributor.author Mosleh, Mohammad
dc.contributor.author Bahar, Ali Newaz
dc.contributor.author Yalcin, Senay
dc.date.accessioned 2023-10-19T15:11:39Z
dc.date.available 2023-10-19T15:11:39Z
dc.date.issued 2023
dc.description.abstract In the nano-scale era, quantum-dot cellular automata (QCA) technology has become an appealing substitute for transistor-based technologies. QCA will be the preferred technology for developing the next generation of digital systems. On the other hand, the full-adder and ripple carry adder (RCA) are the crucial building blocks of complex circuits, the most used structures in digital operations systems, and a practical part of the most well-known complex circuits in QCA technology. In addition, this technology was used to design the full adder for several procedures, like multiplication, subtraction, and division. For this reason, the full adder is generally investigated as a central unit and microprocessor in developing QCA technology. Furthermore, most previous QCA-based adder structures have suffered from some drawbacks, such as a high number of cells, high energy consumption, the high number of gates, and the placement of inputs and outputs in a closed loop; hence, the implementation of an efficient adder with only one gate and a low number of cells, such as exclusive-OR (XOR) gate, can solve all previous problems. Therefore, in this paper, a significantly improved structure of 3-input XOR is suggested based on the promising QCA technology. In addition, a QCA clocking mechanism and explicit cell interaction form the foundation of the proposed QCA-based XOR gate configuration. This gate can be easily converted into an adder circuit while containing a small number of cells and being extremely compressed. The suggested QCA-based XOR design is focused on optimizing a single-bit adder using cellular interaction. The suggested single-bit adder contains 14 cells. Based on this adder, several different RCAs, such as 4, 8, 16, and 32-bit, are designed. The comparison of the proposed single-bit adder to the best coplanar and multi-layer ones shows a 51.72% and 36.36% reduction of cells, respectively. In addition, all suggested designs are verified through simulation using QCADesigner and QCAPro. Finally, many physical validations are provided to approve the functionality of the suggested XOR design.(c) 2023 Elsevier B.V. All rights reserved. en_US
dc.identifier.doi 10.1016/j.nancom.2023.100442 en_US
dc.identifier.issn 1878-7789
dc.identifier.issn 1878-7797
dc.identifier.scopus 2-s2.0-85150056490 en_US
dc.identifier.uri https://doi.org/10.1016/j.nancom.2023.100442
dc.identifier.uri https://hdl.handle.net/20.500.12469/5154
dc.language.iso en en_US
dc.publisher Elsevier en_US
dc.relation.ispartof Nano Communication Networks en_US
dc.rights info:eu-repo/semantics/closedAccess en_US
dc.subject Cellular-Automata En_Us
dc.subject Full-Adder En_Us
dc.subject Design En_Us
dc.subject Circuits En_Us
dc.subject Nanotechnology en_US
dc.subject Cellular-Automata
dc.subject Adder en_US
dc.subject Full-Adder
dc.subject Quantum-dot cellular automata en_US
dc.subject Design
dc.subject RCA en_US
dc.subject Circuits
dc.subject 3-input XOR gate en_US
dc.title A Nano-Scale N-Bit Ripple Carry Adder Using an Optimized Xor Gate and Quantum-Dots Technology With Diminished Cells and Power Dissipation en_US
dc.type Article en_US
dspace.entity.type Publication
gdc.author.id Jafari Navimipour, Nima/0000-0002-5514-5536
gdc.author.id Ahmadpour, Seyed-Sajad/0000-0003-2462-8030
gdc.author.wosid Jafari Navimipour, Nima/AAF-5662-2021
gdc.bip.impulseclass C3
gdc.bip.influenceclass C4
gdc.bip.popularityclass C3
gdc.coar.access metadata only access
gdc.coar.type text::journal::journal article
gdc.collaboration.industrial false
gdc.description.departmenttemp [Ahmadpour, Seyed-Sajad; Navimipour, Nima Jafari] Kadir Has Univ, Dept Comp Engn, Istanbul, Turkiye; [Navimipour, Nima Jafari] Natl Yunlin Univ Sci & Technol, Future Technol Res Ctr, Touliu 64002, Yunlin, Taiwan; [Mosleh, Mohammad] Islamic Azad Univ, Dept Comp Engn, Dezful Branch, Dezful, Iran; [Bahar, Ali Newaz] Univ Saskatchewan, Dept Elect & Comp Engn ECE, 57 Campus Dr, Saskatoon, SK S7N 5A9, Canada; [Yalcin, Senay] Nisantasi Univ, Dept Comp Engn, Istanbul, Turkiye en_US
gdc.description.publicationcategory Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı en_US
gdc.description.scopusquality Q2
gdc.description.startpage 100442
gdc.description.volume 36 en_US
gdc.description.wosquality Q2
gdc.identifier.openalex W4321793958
gdc.identifier.wos WOS:000956231900001 en_US
gdc.index.type WoS
gdc.index.type Scopus
gdc.oaire.diamondjournal false
gdc.oaire.impulse 49.0
gdc.oaire.influence 5.028873E-9
gdc.oaire.isgreen false
gdc.oaire.keywords Design
gdc.oaire.keywords Circuits
gdc.oaire.keywords RCA
gdc.oaire.keywords Adder
gdc.oaire.keywords Nanotechnology
gdc.oaire.keywords Quantum-dot cellular automata
gdc.oaire.keywords 3-input XOR gate
gdc.oaire.keywords Cellular-Automata
gdc.oaire.keywords Full-Adder
gdc.oaire.popularity 3.9722995E-8
gdc.oaire.publicfunded false
gdc.oaire.sciencefields 0202 electrical engineering, electronic engineering, information engineering
gdc.oaire.sciencefields 02 engineering and technology
gdc.oaire.sciencefields 0210 nano-technology
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gdc.opencitations.count 32
gdc.plumx.crossrefcites 48
gdc.plumx.mendeley 6
gdc.plumx.scopuscites 51
gdc.scopus.citedcount 52
gdc.virtual.author Jafari Navimipour, Nima
gdc.wos.citedcount 43
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